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  • Publication list（2008）

    1. X. L. Zhu, L. W. Guo, M. Z. Peng, B. H. Ge, J. Zhang, G. J. Ding, H.Q. Jia, H. Chen and J. M.Zhou, Characterization of a-plane InN film grown on r-plane sapphire by MOCVD, Journal of Crystal Growth 310,3726 (2008)

    2. PENG Ming-Zeng, GUO Li-Wei, ZHANG Jie, YU Nai-Sen，ZHU Xue-Liang, YAN Jian-Feng, GE Bin-Hui, JIA Hai-Qiang, CHEN Hong,ZHOU Jun-Ming，Three-Step Growth Optimization of AlN Epilayers by MOCVD，CHIN.PHYS.LETT.25, 2265 (2008)

    3. M.Z. Peng, L.W. Guo, J. Zhang, X.L. Zhu, N.S. Yu, J.F. Yan, H.H. Liu,H.Q. Jia, H. Chen, J.M. Zhou, Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices, Journal of Crystal Growth 310, 1088–1092 (2008)

    4. PEI Xiao-Jiang, GUO Li-Wei, WANG Yang, WANG Xiao-Hui, JIA Hai-Qiang, CHEN Hong, ZHOU Jun-Ming, WANG Li, Tamai N, Reversible Carriers Tunnelling in Asymmetric Coupled InGaN/GaN Quantum Wells, CHIN.PHYS.LETT.25, 3470 (2008)

    5. Zhongwei Jiang, Wenxin Wang, Hanchao Gao, Linshen Liu, Hong Chen, Junming Zhou, Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step, Applied Surface Science 254, 5241 (2008)

    6. JIANG Zhong-Wei, WANG Wen-Xin, GAO Han-Chao, LI Hui, YANG Cheng-Liang, HE Tao, WU Dian-Zhong, CHEN Hong, ZHOU Jun-Ming, Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots, CHIN. PHYS.LETT.25, 2649 (2008)

    7. ZHANG Jie, GUO Li-Wei, XING Zhi-Gang, GE Bing-Hui, DING Guo-Jian, PENG Ming-Zeng, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong, Growth of Highly Conductive n-Type Al0.7 Ga0.3N Film by Using AlN Buffer with Periodical Variation of V/III Ratio, CHIN.PHYS.LETT. Vol. 25, 4449 (2008)

    8. GAO Han-Chao, WANG Wen-Xin, JIANG Zhong-Wei, LIU Jian,YANG Cheng-Liang, WU Dian-Zhong, ZHOU Jun-Ming, CHEN Hong，Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAsSb Grown on GaAs by Molecular Beam Epitaxy，CHIN. PHYS. LETT. Vol. 25, No. 12 (2008) 4466

    9. Wangping Wang, Ying Hou, Dayuan Xiong, Ning Li, and Wei Lu, Wenxing Wang, Hong Chen, and Junming Zhou, E. Wu and Heping Zeng, High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode, APPLIED PHYSICS LETTERS 92, 023508 (2008)

  • Publication list（2007）

    1. Y. Wang, X. J. Pei, Z. G. Xing, L. W. Guo, H. Q. Jia, H. Chen, and J. M. Zhou， Anomalous tunneling effect on photoluminescence of asymmetric coupled double InGaN/GaN quantum wells, Appl. Phys. Lett. 91, 061902 (2007)

    2. X. H. Wang, H. Q. Jia, L. W. Guo, Z. G. Xing, Y. Wang, X. J. Pei, J. M. Zhou, H. Chen，White light-emitting diodes based on a single InGaN emission layer， Appl. Phys. Lett. 91,161912 (2007)

    3. X. L. Zhu, L. W. Guo, B. H. Ge, H.Q.Jia, H.Chen and J.M.Zhou, Phase segregation of metallic indium cluster in thick InGaN film grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 91, 172110 (2007)

    4. J.F. Yan_, L.W. Guo, J. Zhang, X.L. Zhu, G.J. Ding, Z.G. Xing, Z.T. Zhou, X.J. Pei, Y. Wang, H.Q. Jia, H. Chen, J.M. Zhou, Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer, Journal of Crystal Growth 307, 35 (2007)

    5. M.Z. Peng_, L.W. Guo, J. Zhang, N.S. Yu, X.L. Zhu, J.F. Yan, Y. Wang, H.Q. Jia, H. Chen, J.M. Zhou, Effect of growth temperature of initial AlN buffer on the structural and optical properties of Al-rich AlGaN, Journal of Crystal Growth 307, 35 (2007)

    6. Yan JF, Xing ZG, Wang J, Guo LW, Zhu XL, MZ Peng, NS Yu, HQ Jia, Chen H, Zhou JM, Elimination of crystallographic wing tilt of canti-bridged epitaxial laterally overgrown GaN films by optimizing growth procedure, CHINESE PHYSICS LETTERS 24 (7), 2018-2021 (2007)

    7. Zhou ZT, Guo LW, Xing ZG, Ding GJ, Zhang J, Peng MZ, Jia HQ, Chen H, Zhou JM, Growth of semi-insulating GaN by using two-step AlN buffer layer, CHINESE PHYSICS LETTERS 24 (6): 1641-1644 (2007)

    8. Zhou ZT, Xing ZG, Guo LW, Chen H, Zhou JM, Growth of semi-insulating GaN using N-2 as nucleation layer carrier gas combining with an optimized annealing time, CHINESE PHYSICS LETTERS 24 (6): 1645-1648 (2007)

    9. Zhou ZT, Guo LW, Xing ZG, Ding GJ, Tan CL, Lu L (Lu Li), Liu J, Liu XY, Jia HQ, Chen H, Zhou JM, The transport property of two dimensional electron gas in AlGaN/AIN/GaN structure , ACTA PHYSICA SINICA 56 (10): 6013-6018 OCT 2007

    10. Wang Y, Pei XJ , Xing ZG, Guo LW, Jia HQ, Chen H, Zhou JM, Investigation on photoluminescence blue shift of InGaN/GaN quantum wells induced by surface band bending, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, 46 (7A): 4079-4084 JUL 2007

    11. Yu NS, Guo LW, Tang LH, Zhu XL, Wang J, Peng MZ, Yan JF, Jia HQ , Chen H, Zhou JM, The origin of wing tilt for uncoalesced GaN grown on maskless grooved sapphire fabricated by wet chemical etching, MATERIALS RESEARCH BULLETIN 42 (9): 1589-1593 SEP 4 2007

    12. Wang Y, Pei XJ, Xing ZG, L. W. Guo, H. Q. Jia, H. Chen, and J. M. Zhou. Effects of barrier growth temperature ramp-up time on the photoluminescence of InGaN/GaN quantum wells, JOURNAL OF APPLIED PHYSICS 101 (3): Art. No. 033509 FEB 1 2007

    13. Yu NS, Guo LW, Chen H, Z.G. Xing, B.H. Ge, J. Wang, X.L. Zhu, M.Z. Peng, J.F. Yan, H.Q. Jia, J.M. Zhou, Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching, JOURNAL OF ALLOYS AND COMPOUNDS 428 (1-2): 312-315 JAN 31 2007

    14. Zhigang Xing, J. Wang, Y. Wang, X. H. Wang, Z. T. Zhou, H. Chen, and J. M. Zhou, Crystallographic wing tilt and thermal-stress distribution of GaN laterally overgrown on maskless V-grooved sapphire substrateby metal-organic chemical vapor deposition, J. Vac. Sci. & Tech. B,25, 697 (2007)

    15. Zhigang Xing, J. Wang, XJ Pei, W Wan, H. Chen, and J. M. Zhou, Dislocation reduction mechanisms in gallium Nitride films grown by Canti-Bridge Epitaxy method, CHINESE PHYSICS LETTERS 24 (8): 2353 (2007)

    16. X. L.Zhu, L.W.Guo N. S.Yu, J.F.Yan, M.Z.Peng, H.Q.Jia, H.Chen J.M.Zhou, Struutural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition, Journal of Crystal Growth 306, 292 (2007)

    17. Liu LS, Wang WX, Li ZH, B.L. Liu, H.M. Zhao, J. Wang, H.C. Gao, Z.W. Jiang, S. Liu, H. Chen, J.M. Zhou, Influence of interface interruption on spin relaxation in GaAs (110) quantum wells, JOURNAL OF CRYSTAL GROWTH 301: 93-96 (2007)

    18. 刘林生,刘肃,王文新,赵宏鸣,刘宝利, 蒋中伟,高汉超,王佳,黄庆安, 陈弘, 周均铭, 关于RHEED振荡技术优化GaAs(110)量子阱生长的研究(Optimization of GaAs (110) quantum well material growth technology by reflection high energy electron diffraction), ACTA PHYSICA SINICA 56 (6): 3355-3359 (2007)

    19. Li ZH, Wang WX, Liu LS, HC Gao, ZW Jiang, JM Zhou, H Chen, Buffer influence on AlSb/InAs/AlSb quantum wells, JOURNAL OF CRYSTAL GROWTH 301: 181-184 (2007)

    20. Hanchao Gao, Wenxin Wang_, Zhongwei Jiang, Linsheng Liu, Junming Zhou, Hong Chen, The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy, JOURNAL OF CRYSTAL GROWTH 308,406 (2007)

    21. C.H. Zhang, Y. Song, Y.M. Sun, H. Chen, Y.T. Yang, L.H. Zhou, Y.F. Jin, Damage accumulation in gallium nitride irradiated with various energetic heavy ions, Nuclear Instruments and Methods in Physics Research B 256, 199–206 (2007)

    22. 张洁， 彭铭曾，朱学亮，颜建锋，郭丽伟，贾海强，陈弘，周均铭，AlN外延薄膜的生长和特征， 激光与红外 37，974 （2007）

    23. Yibo Han, Si Xiao, Hongming Zhao Hanchao Gao, G. G. Xiong and Q. Q. Wang, Imaging spatial distributions of laser-induced charge and spin in GaAs/AlGaAs two-dimensional electron gas by pump-probe second harmonic generation, Appl. Phys. Lett. 91,202114 (2007)

    24. Hongming Zhao, Baoli Liu, Liwei Guo, Changling Tan, Hong Chen, and Dongmin Chen, Experimental observation of isotropic in-plane spin splitting in GaN/AlGaN two-dimensional electron gas, Appl. Phys. Lett., 91, 252105 (2007)

    25. Liang Chen, Jun Chen, Yun Bai, Liwei Guo, Yan Zhang, Xiangyang Li, and Haimei Gong, Back-illuminated GaN/AlGaN visible-blind photodiodes, Proc. SPIE 6724, 67240I (2007)

  • Publication list（2006）

    1. Yu N S , Guo L W , Chen H , Xing Z G , Wang J , Zhu X L , Peng M Z , Yan J F , Jia H Q , Zhou J M
      Luminescent characteristics of near ultraviolet InGaN/GaN MQWs grown on grooved sapphire substrates fabricated by wet chemical etching
      CHINESE PHYSICS LETTERS, 23 (8): 2243-2246 AUG 2006

    2. X Z Shang ,S D Wu ,C Liu ,W X Wang ,L W Guo ,Q huang and J M Zhou
      Low temperature step-graded InAlAs/GaAs metamorphic buner layers grown by molecular beam epitaxy
      JOURNAL OF PHYSICS D-APPLIED PHYSICS, 39 (9): 1800-1804 MAY 7 2006

    3. X.Z.Shang , P.J. Niu , B.N. Mao , W.X. Wang , L.W. Guo , Q. Huang , J.M. Zhou InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
      SOLID STATE COMMUNICATIONS, 138 (3): 114-117 2006

    4. Jing Wang, L.W. Guo, H.Q. Jia, Z.G. Xing, Y. Wang, J.F. Yan,N.S. Yu, H. Chen, J.M. Zhou
      Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching
      JOURNAL OF CRYSTAL GROWTH, 290 (2): 398-404 MAY 1 2006

    5. Jing Wang, L. W. Guo, H. Q. Jia, Y. Wang, Z. G. Xing, W. Li, H. Chen, and J. M. Zhou
      Fabrication of patterned sapphire substrate by wet chemical etching for maskless lateral overgrowth of GaN
      JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153 (3): C182-C185 2006

    6. Jing Wang, L.W. Guo, H.Q. Jia, Z.G. Xing, Y. Wang, H. Chen and J.M. Zhou
      Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching, Thin Solid Films, Volume 515, Issue 4, Pages 1727-1730, 2006,

    7. Zhen HL, Li N, Jiang J, Xu WL, Lu W, Huang Q, Zhou JM.
      Study on substrate-lifted-off quantum well infrared photodetector
      JOURNAL OF INFRARED AND MILLIMETER WAVES 25 (3): 161-164 JUN 2006

    8. Zhang J, Cheng XK, Zhou JM, Huang Q
      The wavelength of the responsive peak resulted from electron interferences for multi-quantum well infrared detectors
      PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 33 (1): 211-215 JUN 2006

    9. 彭铭曾，张洁，朱学亮，郭丽伟，贾海强，陈弘，周均铭， n型AlGaN材料的电学和光学性质，激光与红外，36（11），1057（2006）

    10. Characteristics of High In-content InGaN Alloys Grown by MOCVD
      Zhu Xue-Liang, Guo Li-Wei, Jia Hai-Qiang, Yu Nai-Sen, Yan Jian-Feng, Peng Ming-Zeng, Chen Hong and Zhou Jun-Ming, Chin. phys. Lett. 23(12)2006, 3369

  • Publication list（2005）

    1. Wing-tilt-free gallium nitride laterally grown on maskless chemical etched sapphire-patterned substrate, by Jing Wang, L.W.Guo, H.Q.Jia, Z.G.Xing, Y.Wang. H.Chen and J.M.Zhou, J. Vac. Sci. Technol. B23, 2476 (2005)

    2. Qin Qi,GuoLi-Wei,Zhou Zhong-Tang, Chen Hong, Du Xiao-Long, Mei Zeng-Xia, Jia Jin-Feng, Xue Qi-Kun and Zhou Jun-Ming Electroluminescence of an n-ZnO/p-GaN Heterojunction under Forward and Reverse Biases Chinese Phys. Lett. 22，2298 (2005)

    3. Wang J, Guo LW, Jia HQ, Z.G.Xing, Y.Wang. H.Chen and J.M.Zhou, Origin of selective growth of GaN on maskless V-grooved sapphire substrates by metalorganic chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 (28-32): L982-L984 2005

    4. Li ZH, Guo LW, Wu SD, et al. Interface properties of InAs/AlSb superlattices characterized by grazing incidence x-ray reflectivity CHINESE PHYSICS LETTERS 22 (7): 1729-1731 JUL 2005

    5. Wu SD, Wang WX, Guo LW, et al. Optical properties of AlAs/GaAs quantum wells with antimony as a surfactant by solid source molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH 278 (1-4): 548-552 MAY 1 2005

    6. Wu SD, Guo LW, Li ZH, et al. Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy JOURNAL OF CRYSTAL GROWTH 277 (1-4): 21-25 APR 15 2005

    7. Wu SD, Guo LW, Wang WX, et al. Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source CHINESE PHYSICS LETTERS 22 (4): 960-962 APR 2005

    8. 秦琦，于乃森，郭丽伟，汪洋，朱学亮，陈弘，周均铭，使用SiNx原位淀积方法生长的GaN外延膜中的应力研究，物理学报，54，5450 （2005）

    9. M.J.Ying, X.L.Du, Y.Z.Liu, Z.T.Zhou, Z.Q.Zeng, Z.X.Mei, J.F.Jia, H.Chen and Q.K.Xue, Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O3(111) substrate, Appl.Phys.Lett, 87, 202107 (2005)

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